Title :
Vertical cavity lasers on p-doped substrates
Author :
Lear, K.L. ; Hou, H.Q. ; Banas, J.J. ; Hammons, B.E. ; Furioli, J. ; Osinski, M.
Author_Institution :
Dept. of Photonics Res., Sandia Nat. Labs., Albuquerque, NM
fDate :
4/24/1997 12:00:00 AM
Abstract :
Vertical cavity surface emitting laser (VCSEL) diodes fabricated with inverted polarity, i.e. p-type bottom mirror and n-type top mirror, are reported with lower resistance and diode voltage and comparable output characteristics relative to similar conventional, non-inverted structures
Keywords :
laser mirrors; semiconductor lasers; surface emitting lasers; diode voltage; inverted polarity; n-type top mirror; noninverted structures; output characteristics; p-doped substrates; p-type bottom mirror; surface emitting laser; vertical cavity lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970492
