AlGaN/GaN double heterostructure channel modulation doped field effect transistors (MODFETs)

AlGaN/GaN double heterostructure channel modulation doped field effect-transistors (DHCMODFETs) with a 1.5-1.75 μm gate length and 3 μm channel length exhibiting record transconductances and saturation current have been demonstrated. The maximum normalised drain current and transconductance are ~1100 mA/mm and 270 mS/mm, respectively, at room temperature. Near pinch-off, the drain breakdown voltage is ~80 V. At an elevated temperature of 300°C, the maximum drain source current and extrinsic transconductance of the device are ~500 mA/mm and 120 mS/mm, respectively