Title :
Direct extraction of base-collector model parameters for AlGaAs/GaAs HBT equivalent circuit
Author_Institution :
Dept. of Electron. Eng., Hankuk Univ. of Foreign Studies, Yongin, South Korea
fDate :
4/24/1997 12:00:00 AM
Abstract :
A new and direct extraction technique based on analytical equations of Z-parameters is used to determine all parameters in the base contact impedance and distributed base model of the AlGaAs/GaAs HBT, without numerical optimisation processing. This technique yields good agreement between HBT equivalent circuit and measured S-parameters, verifying the accuracy of the extraction
Keywords :
III-V semiconductors; S-parameters; aluminium compounds; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; AlGaAs-GaAs; AlGaAs/GaAs HBT; S-parameters; Z-parameters; base contact impedance; base-collector model; direct extraction; distributed base model; equivalent circuit;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970539
