Title :
High-performance X-band MMIC LNAs using dry recessed PHEMTs
Author :
Kwon, Youngwoo ; Sovero, E.A. ; Deakin, D.S. ; Higgins, J.A.
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ.
fDate :
4/24/1997 12:00:00 AM
Abstract :
The authors report compact and low-DC-power LNAs using dry recessed PHEMTs. Dry recess and optimum circuit design were used to reduce the chip size and DC power consumption while improving uniformity and yield. Two-stage PHEMT LNAs showed a noise figure of 1.45 dB at 10 GHz with a 22 dB gain. The active chip size was 0.9 mm2 and DC power consumption was 75 mW
Keywords :
HEMT integrated circuits; MMIC amplifiers; field effect MMIC; 1.45 dB; 10 GHz; 22 dB; 75 mW; DC power consumption; X-band MMIC LNA; active chip size; dry recessed PHEMT; gain; low-power two-stage amplifier; noise figure; optimum circuit design; uniformity; yield;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970544
