Avalanche-induced effects in polysilicon thin-film transistors

Author

Hack, M. ; Lewis, Alan G.

Author_Institution

Xerox Palo Alto Res. Center, CA, USA

Volume

12

Issue

5

fYear

1991

fDate

5/1/1991 12:00:00 AM

Firstpage

203

Lastpage

205

Abstract

A comparison of experimental data and two-dimensional numerical simulations of polysilicon thin-film transistors (TFTs) is presented. It is shown that avalanche multiplication causes both the kink effect in the output characteristics and the reduction of threshold voltage in short-channel device. It is shown that exactly the same physical model for avalanche multiplication gives very good agreement between simulations and experimental data for both these effects. It is demonstrated that it is the presence of grain boundaries or traps in the polysilicon that causes avalanche effects to be much greater than in comparable single-crystal silicon devices.<>

Keywords

elemental semiconductors; insulated gate field effect transistors; semiconductor device models; silicon; thin film transistors; 2D model; TFT; avalanche induced effects; avalanche multiplication; experimental data; grain boundaries; kink effect; output characteristics; physical model; polycrystalline Si; polysilicon thin-film transistors; short-channel device; threshold voltage; two-dimensional numerical simulations; Computational modeling; Computer hacking; Driver circuits; Grain boundaries; Numerical simulation; Silicon compounds; Silicon devices; Silicon on insulator technology; Thin film transistors; Threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.79556

Filename

79556