High-power V-band pseudomorphic InGaAs HEMT

Author

Tan, K.L. ; Streit, Dwight C. ; Dia, R.M. ; Wang, Shing K. ; Han, A.C. ; Chow, Pei-Ming D. ; Trinh, Tien Q. ; Liu, P.H. ; Velebir, J.R. ; Yeii, H.C.

Author_Institution

TRW, Redondo Beach, CA, USA

Volume

12

Issue

5

fYear

1991

fDate

5/1/1991 12:00:00 AM

Firstpage

213

Lastpage

214

Abstract

The author´s present the DC and RF power performance of planar-doped channel InGaAs high-electron-mobility transistors (HEMTs). The planar-doped channel (PDC) pseudomorphic GaAs HEMT with 400 mu m of gate width exhibited an output power of 184 mW, corresponding to 460 mW/mm, with 4.6-dB saturation gain and 25% power-added efficiency at 55 GHz. Although higher power density is possible, the authors have designed the device to operate at less than 500 mW/mm for thermal and reliability reasons. Devices with unit gate finger widths ranging from 30 to 50 mu m were fabricated and characterized, with no performance degradation observed from using the longer gate fingers.<>

Keywords

III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 0.25 micron; 184 mW; 25 percent; 30 to 50 micron; 4.6 dB; 400 micron; 55 GHz; DC power performance; EHF; HEMT; InGaAs; RF power performance; V-band; gain; gate fingers; gate width; high-electron-mobility transistors; output power; planar-doped channel; power density; power-added efficiency; pseudomorphic HEMTs; semiconductors; unit gate finger widths; Etching; Fabrication; Fingers; Frequency; Gallium arsenide; Grounding; HEMTs; Indium gallium arsenide; Power generation; Substrates;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.79559

Filename

79559