DocumentCode :
1250395
Title :
65 GHz small-signal-bandwidth switched emitter follower in InP heterojunction bipolar transistors
Author :
Deza, J. ; Ouslimani, A. ; Konczykowska, Agnieszka ; Kasbari, A. ; Godin, J. ; Pailler, G.
Author_Institution :
Alcatel-Lucent Bell Labs., Marcoussis, France
Volume :
48
Issue :
15
fYear :
2012
Firstpage :
908
Lastpage :
910
Abstract :
Performances of two switched emitter follower structures for large bandwidth applications have been optimised, compared, implemented and measured. These circuits have been fabricated with a 320 GHz-FT InP double heterojunction bipolar transistor process. Measurements in track mode show a small-signal bandwidth over 65 GHz for one structure and over 50 GHz for the other. Track mode SFDR measured for 500 mVPP up to 15 GHz signal input is greater than 45 dBc.
Keywords :
III-V semiconductors; amplifiers; heterojunction bipolar transistors; indium compounds; measurement systems; millimetre wave transistors; InP; circuit fabrication; double heterojunction bipolar transistor process; frequency 320 GHz; frequency 65 GHz; large bandwidth applications; signal input; small-signal-bandwidth switched emitter follower; track mode SFDR; track mode measurements; voltage 500 mV;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2012.1770
Filename :
6248329
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1250395
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