Rectifying characteristics of thin film self-switching devices with ZnO deposited by atomic layer deposition

To realise a rectifying device utilising ZnO, self-switching devices (SSDs) have been fabricated using ZnO thin films. The SSDs do not require a p-type doping junction or a Schottky barrier. At first, normally-off ZnO thin film transistors were fabricated, which exhibited control of threshold voltage by the channel length. Thin film SSDs using a thin film transistor structure were successfully fabricated by connecting the gate electrode with the source electrode. Finally, half-wave rectification using thin film SSDs is demonstrated, which reveals the possibility of ZnO thin film SSDs for power supply.