Title :
A new MOS-gated power thyristor structure with turn-off achieved by controlling the base resistance
Author :
Nandakumar, M. ; Baliga, B.J. ; Shekar, M.S. ; Tandon, S. ; Reisman, Arnold
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
fDate :
5/1/1991 12:00:00 AM
Abstract :
A new MOS-gated power thyristor structure, called the base-resistance-controlled thyristor (BRT), is described. In this structure, the turn-off of a thyristor with an N-drift region is achieved by reducing the resistance of the P-base region under MOS-gate control. In contrast with previous devices, a P-channel MOSFET integrated in the N-drift region is used for this purpose. It has been shown, by two-dimensional numerical simulations and experimental measurements on devices fabricated using a seven-mask process, that devices with 600-V forward blocking capabilities can be achieved with a forward drop close to that for a thyristor. The ability to turn off the thyristor current flow has been verified over a broad range of current densities.<>
Keywords :
insulated gate field effect transistors; power electronics; thyristors; 600 V; BRT; MOS-gate control; MOS-gated power thyristor structure; N-drift region; P-channel MOSFET; base-resistance-controlled thyristor; forward blocking capabilities; forward drop; seven-mask process; turn-off; two-dimensional numerical simulations; Cathodes; Computer simulation; Fabrication; Helium; Insulated gate bipolar transistors; Low voltage; MOSFET circuits; Microelectronics; Testing; Thyristors;
Journal_Title :
Electron Device Letters, IEEE
