• DocumentCode
    1250465
  • Title

    A gate-quality dielectric system for SiGe metal-oxide-semiconductor devices

  • Author

    Iyer, S.S. ; Solomon, Paul M. ; Kesan, Vijay P. ; Bright, A.A. ; Freeouf, John L. ; Nguyen, Thao N. ; Warren, Alan C.

  • Author_Institution
    IBM Thomas, J Watson Res. Center, Yorktown Heights, NY, USA
  • Volume
    12
  • Issue
    5
  • fYear
    1991
  • fDate
    5/1/1991 12:00:00 AM
  • Firstpage
    246
  • Lastpage
    248
  • Abstract
    The authors present a high-quality dielectric system for use with Si/sub 1-x/Ge/sub x/ alloys. The system employs plasma-enhanced chemical vapor deposited (PECVD) SiO/sub 2/ on a thin (6-8-nm) layer of pure silicon grown epitaxially on the Si/sub 1-x/Ge/sub x/ layer. The buffer layer and the deposited oxide prevent the accumulation of Ge at the oxide-semiconductor interface and thus keep the interface state density within acceptable limits. The Si cap layer leads to a sequential turn-on of the Si/sub 1-x/Ge/sub x/ channel and the Si cap channel as is clearly observed in the low-temperature C-V curves. The authors show that this dual-channel structure can be designed to suppress the parasitic Si cap channel. The MOS capacitors are also used to extract valence-band offsets.<>
  • Keywords
    Ge-Si alloys; dielectric thin films; insulated gate field effect transistors; metal-insulator-semiconductor structures; plasma CVD; semiconductor materials; semiconductor technology; silicon compounds; 6 to 8 nm; MOS capacitors; MOSFETs; PECVD; Si buffer layer; Si cap channel; Si cap layer; Si/sub 1-x/Ge/sub x/ alloys; Si/sub 1-x/Ge/sub x/ channel; Si/sub 1-x/Ge/sub x/-Si-SiO/sub 2/; SiGe MOS devices; dual-channel structure; gate-quality dielectric system; high-quality dielectric system; interface state density; low-temperature C-V curves; valence-band offsets; Buffer layers; Chemicals; Dielectrics; Germanium alloys; Germanium silicon alloys; Interface states; MOS capacitors; Plasma chemistry; Silicon alloys; Silicon germanium;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.79571
  • Filename
    79571