Comparison of radiation damage in silicon induced by proton and neutron irradiation

Author

Ruzin, A. ; Casse, G. ; Glaser, M. ; Zanet, A. ; Lemeilleur, F. ; Watts, S.

Author_Institution

EP Div., CERN, Geneva, Switzerland

Volume

46

Issue

5

fYear

1999

fDate

10/1/1999 12:00:00 AM

Firstpage

1310

Lastpage

1313

Abstract

The subject of radiation damage to Si detectors induced by 24-GeV/c protons and nuclear reactor neutrons has been studied. Detectors fabricated on single-crystal silicon enriched with various impurities have been tested. Significant differences in electrically active defects have been found between the various types of material. The results of the study suggest for the first time that the widely used nonionizing energy loss (NIEL) factors are insufficient for normalization of the electrically active damage in case of oxygen- and carbon-enriched silicon detectors. It has been found that a deliberate introduction of impurities into the semiconductor can affect the radiation hardness of silicon detectors

Keywords

elemental semiconductors; impurities; neutron effects; proton effects; radiation hardening (electronics); silicon; silicon radiation detectors; Si detector; Si:C; Si:O; electrically active defects; impurities; neutron irradiation; nonionizing energy loss factors; proton irradiation; radiation damage; radiation hardness; Energy loss; Leakage current; Neutrons; Predictive models; Protons; Radiation detectors; Semiconductor radiation detectors; Silicon radiation detectors; Space charge; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.795808

Filename

795808