An 8-Mb Phase-Change Random Access Memory Chip Based on a Resistor-on-Via-Stacked-Plug Storage Cell

Author

Cai, Daolin ; Chen, Houpeng ; Wang, Qian ; Chen, Yifeng ; Song, Zhitang ; Wu, Guanping ; Feng, Songlin

Author_Institution

State Key Lab. of Functional Mater. for Inf., Shanghai Inst. of Microsyst. & Inf. Technol., Shanghai, China

Volume

33

Issue

9

fYear

2012

Firstpage

1270

Lastpage

1272

Abstract

In this letter, an 8-Mb phase-change random access memory (PCRAM) chip has been developed in a 130-nm 4-ML standard CMOS technology based on a Resistor-on-Via-stacked-Plug (RVP) storage cell structure. This phase-change resistor is formed after CMOS logic fabrication. PCRAM can be embedded without changing any logic device and process. The memory cell selector is implemented by a standard 1.2-V nMOS device. The currents of the set and reset operations are 0.4 and 2.2 mA, respectively. The best endurance is over 10¹⁰ cycles.

Keywords

CMOS logic circuits; CMOS memory circuits; MIS devices; phase change memories; 4-ML standard CMOS technology; CMOS logic fabrication; PCRAM chip; RVP storage cell structure; current 0.4 mA; current 2.2 mA; logic device; memory cell selector; nMOS device; phase-change random access memory chip; resistor-on-via-stacked-plug storage cell structure; size 130 nm; voltage 1.2 V; CMOS integrated circuits; CMOS technology; Heating; Materials; Phase change random access memory; Resistance; Standards; Complementary metal–oxide–semiconductor (CMOS); endurance; phase-change random access memory (PCRAM); phase-change resistor; resistor-on-via-stacked-plug (RVP);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2204952

Filename

6248672