220-GHz Solid-State Power Amplifier Modules

Author

Radisic, Vesna ; Leong, Kevin M K H ; Sarkozy, Stephen ; Mei, Xiaobing ; Yoshida, Wayne ; Liu, Po-Hsin ; Deal, William R. ; Lai, Richard

Author_Institution

Northrop Grumman Aerosp. Syst., Redondo Beach, CA, USA

Volume

47

Issue

10

fYear

2012

Firstpage

2291

Lastpage

2297

Abstract

This paper reports on several solid-state power amplifier (PA) modules operating at frequencies around the 220-GHz propagation window. Included is a single module demonstrating saturated output power ≥60 mW from 205 to 225 GHz and peak output power of 75 mW at 210 GHz using eight-way on-chip power combining. The output power is further increased by using waveguide power combining with WR-4 waveguide. Results include a single two-way combined module achieving >; 100 mW of power from 210 to 225 GHz and four-way combining using two two-way combiners to reach 185 mW of output power at 210 GHz. The amplifier MMICs uses sub-50-nm InP HEMT transistors, coplanar waveguide (CPW) technology, and on-chip electromagnetic transitions to waveguide. Finally, preliminary burn-in and initial room-temperature lifetest data is shown.

Keywords

HEMT integrated circuits; MMIC power amplifiers; coplanar waveguides; high electron mobility transistors; HEMT transistor; amplifier MMIC; coplanar waveguide technology; frequency 205 GHz to 225 GHz; initial room temperature lifetest data; on-chip electromagnetic transition; peak output power; power 185 mW; power 75 mW; saturated output power; solid state power amplifier modules; waveguide power; Coplanar waveguides; Electromagnetic waveguides; Gain; MMICs; Power generation; Power measurement; Transistors; Coplanar waveguide (CPW); HEMT; monolithic microwave integrated circuit (MMIC); power amplifier (PA); solid-state power amplifier (SSPA);

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2012.2204923

Filename

6248711