DocumentCode
1251239
Title
Q-band GaAs MESFET oscillator with 30% efficiency
Author
Tserng, H.Q. ; Kim, B.
Author_Institution
Texas Instrum. Inc., Dallas, TX, USA
Volume
24
Issue
2
fYear
1988
fDate
1/21/1988 12:00:00 AM
Firstpage
83
Lastpage
84
Abstract
Microstrip GaAs MESFET oscillators using 75×0.25 μm devices have achieved record efficiencies and power densities at Q-band. At 34 GHz, an efficiency of 30% was obtained with an output power of 33 mW. A similar output power was achieved at 40 GHz with an efficiency of 25%. The corresponding power densities are in excess of 0.4 W per millimetre of gate width
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; microwave oscillators; solid-state microwave circuits; 25 to 30 percent; 33 mW; 34 to 40 GHz; GaAs; III-V semiconductors; MESFET oscillator; Q-band; high efficiency operation; microstrip type; solid state microwave circuits;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
5520
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