A Full-Swing a-IGZO TFT-Based Inverter With a Top-Gate-Bias-Induced Depletion Load

Author

Seok, Man Ju ; Choi, Min Hyuk ; Mativenga, Mallory ; Geng, Di ; Kim, Deok Yeol ; Jang, Jin

Author_Institution

Kyung Hee Univ., Seoul, South Korea

Volume

32

Issue

8

fYear

2011

Firstpage

1089

Lastpage

1091

Abstract

A high-performance inverter implemented with single-gated driving and dual-gated load amorphous-indium-gallium-zinc-oxide thin-film transistors (TFTs) is demonstrated. The threshold voltage of the load TFT shifts to the negative gate voltage direction when a constant positive bias is applied on the top gate while sweeping the bottom gate. Using a positive top gate bias, the load TFT can be operated in the depletion mode to realize inverters with excellent switching characteristics, such as a wider swing range and a higher noise margin.

Keywords

gallium compounds; indium compounds; invertors; thin film transistors; zinc compounds; InGaZnO; a-IGZO TFT-based inverter; amorphous-indium-gallium-zinc-oxide; depletion mode; dual-gated load; single-gated driving; thin-film transistors; top-gate-bias-induced depletion load; Electrodes; Fabrication; Inverters; Logic gates; Thin film transistors; Threshold voltage; Amorphous-indium–gallium–zinc–oxide (a-IGZO); depletion load; inverter; thin-film transistor (TFT);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2157798

Filename

5910354