Empirical model for the low-frequency noise of hot-carrier degraded submicron LDD MOSFETs

Author

Simoen, E. ; Vasina, P. ; Sikula, J. ; Claeys, C.

Author_Institution

IMEC, Leuven, Belgium

Volume

18

Issue

10

fYear

1997

Firstpage

480

Lastpage

482

Abstract

This paper discusses the empirical low-frequency (LP) noise behavior of hot-carrier degraded Lowly-Doped Drain (LDD) n-MOSFETs, which have been fabricated in a 0.7-μm CMOS technology. It is shown that the increase of the noise spectral density follows a t/sup 0.3/ power law dependence with stress time. Additionally, an empirical relationship will be shown between the input-referred noise spectral density S/sub VG/ and the transconductance g/sub m/ of the stressed devices. The practical consequences of this exponential dependence will be briefly discussed.

Keywords

1/f noise; MOSFET; electric admittance; hot carriers; semiconductor device models; semiconductor device noise; 0.7 mum; 1/f-like spectrum; CMOS technology; LDD n-MOSFET; empirical model; exponential dependence; hot-carrier degraded submicron LDD MOSFETs; input-referred noise spectral density; low-frequency noise; noise spectral density; power law dependence; transconductance; CMOS technology; Circuit noise; Degradation; Hot carriers; Low-frequency noise; MOSFET circuits; Noise measurement; Stress; Transconductance; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.624921

Filename

624921