Title :
Empirical model for the low-frequency noise of hot-carrier degraded submicron LDD MOSFETs
Author :
Simoen, E. ; Vasina, P. ; Sikula, J. ; Claeys, C.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
This paper discusses the empirical low-frequency (LP) noise behavior of hot-carrier degraded Lowly-Doped Drain (LDD) n-MOSFETs, which have been fabricated in a 0.7-μm CMOS technology. It is shown that the increase of the noise spectral density follows a t/sup 0.3/ power law dependence with stress time. Additionally, an empirical relationship will be shown between the input-referred noise spectral density S/sub VG/ and the transconductance g/sub m/ of the stressed devices. The practical consequences of this exponential dependence will be briefly discussed.
Keywords :
1/f noise; MOSFET; electric admittance; hot carriers; semiconductor device models; semiconductor device noise; 0.7 mum; 1/f-like spectrum; CMOS technology; LDD n-MOSFET; empirical model; exponential dependence; hot-carrier degraded submicron LDD MOSFETs; input-referred noise spectral density; low-frequency noise; noise spectral density; power law dependence; transconductance; CMOS technology; Circuit noise; Degradation; Hot carriers; Low-frequency noise; MOSFET circuits; Noise measurement; Stress; Transconductance; Voltage;
Journal_Title :
Electron Device Letters, IEEE
