A new lateral MOS-gated thyristor with controlling base-current

Author

Sugawara, S. ; Aoki, K. ; Yamaguchi, H. ; Sasaki, K. ; Sasaki, T. ; Fujisaki, H.

Author_Institution

Dept. of Electr. Eng., Tohoku Gakuin Univ., Miyagi, Japan

Volume

18

Issue

10

fYear

1997

Firstpage

483

Lastpage

485

Abstract

A new lateral MOS-gated thyristor, called the Base-Current-Controlled Thyristor, is described. This device is designed so that most holes at the on-stage reach the P base through the floating P/sup +/ region adjacent to the P base and the on-state MOSFET. At the turn-off stage, the interruption of the hole current to the P base due to switching off the above MOSFET occurs simultaneously with the conventional turn-off operation. The concept of this device is verified experimentally by using the fabricated lateral device with the external MOSFET. This device exhibits a better trade-off relation between the on-state voltage and the turn-off time compared uith the conventional MOS-gated thyristor.

Keywords

MOS-controlled thyristors; power semiconductor switches; 1.08 mus; 1.81 mus; base-current-controlled thyristor; external MOSFET; floating P/sup +/ region; hole current interruption; lateral MOS-gated thyristor; on-state MOSFET; on-state voltage; switching; trade-off relation; turn-off stage; turn-off time; Anodes; Cathodes; Electrodes; Epitaxial layers; Insulated gate bipolar transistors; MOSFET circuits; Power integrated circuits; Punching; Thyristors; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.624923

Filename

624923