Title :
New self-aligned planar resonant-tunneling diodes for monolithic circuits
Author :
Chen, C.L. ; Mathews, R.H. ; Mahoney, L.J. ; Maki, P.A. ; Molvar, K.M. ; Sage, J.P. ; Fitch, G.L. ; Sollner, T.C.L.G.
Author_Institution :
Lincoln Lab., MIT, Lexington, MA, USA
Abstract :
Resonant-tunneling diodes (RTDs) with a new planar configuration have been fabricated with a new self-aligned process that is compatible with that of silicon integrated-circuits technology. The size of the RTD is determined by a shallow boron implant, and the individual RTDs are isolated by a deep proton implant. There is no deep mesa etch. Because of the self-alignment nature of the process, the peak current and voltage of the RTDs are highly uniform. The mean of the standard deviation of the peak current for 4-μm2 RTDs is 2.3% and the smallest RTDs fabricated are less than 1 μm2.
Keywords :
III-V semiconductors; aluminium compounds; current distribution; gallium arsenide; indium compounds; ion implantation; isolation technology; resonant tunnelling diodes; voltage distribution; AlAs-InGaAs-GaAs; GaAs:B; RTD isolation; Si integrated-circuit technology compatibility; deep proton implant; monolithic circuits; peak current uniformity; peak voltage uniformity; self-aligned planar resonant-tunneling diodes; shallow B implant; standard deviation mean; Diodes; Fabrication; Gallium arsenide; Implants; Indium gallium arsenide; Ohmic contacts; Protons; RLC circuits; Resonant tunneling devices; Silicon;
Journal_Title :
Electron Device Letters, IEEE
