DocumentCode
1251473
Title
Cyclic current-voltage characterization applied to edge damage evaluation in gate definition plasma etching
Author
Okandan, Murat ; Fonash, Stephen J. ; Ozaita, Milagros ; Preuninger, Fred ; Chan, Y.D. ; Werking, Jim
Author_Institution
Electron. Mater. & Process. Res. Lab., Pennsylvania State Univ., University Park, PA, USA
Volume
18
Issue
10
fYear
1997
Firstpage
495
Lastpage
498
Abstract
A simple two-terminal cyclic current-voltage (I-V) measuring approach is used to monitor damage in gate definition plasma etching of poly-Si gate 70 /spl Aring/ oxide MOS structures. This new technique is used to identify the presence of trapping and near-surface silicon substrate generation lifetime changes due to edge exposure.
Keywords
MOS capacitors; characteristics measurement; electron-hole recombination; hole traps; inversion layers; sputter etching; 70 angstrom; Si; cyclic I-V characterization; edge damage evaluation; edge exposure; gate definition plasma etching; near-surface Si substrate generation lifetime changes; polysilicon gate MOS structures; trapping; two-terminal cyclic current-voltage measuring approach; Current measurement; Etching; Laboratories; Plasma applications; Plasma devices; Plasma materials processing; Plasma measurements; Sampling methods; Tunneling; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.624931
Filename
624931
Link To Document