Title :
Adaptive Gate Bias for Power Amplifier Temperature Compensation
Author :
Chen, Shuyu ; Yuan, Jiann-shiun
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL, USA
Abstract :
Mixed-mode device and circuit simulation is used to examine device self-heating during power amplifier (PA) transient response. Lattice temperature increases with time and eventually saturates beyond the thermal time constant. Temperature variation on the effect of PA performances has been modeled and analyzed. Different gate biasing schemes that reduce the temperature drift of PA output power and power-added efficiency are evaluated. A simple adaptive gate bias technique effectively provides temperature compensation of PA performances over a wide range of temperatures.
Keywords :
power amplifiers; thermal analysis; transient response; adaptive gate bias; circuit simulation; gate biasing; lattice temperature; mixed-mode device; power amplifier temperature compensation; power amplifier transient response; power-added efficiency; self-heating; temperature drift; Impact ionization; Lattices; Logic gates; MOSFETs; Power amplifiers; Temperature sensors; Bias circuit; hot electron; mixed-mode simulation; output power; power amplifier (PA); power-added efficiency; self-heating; temperature compensation;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2011.2160264
