Adaptive Gate Bias for Power Amplifier Temperature Compensation

Author

Chen, Shuyu ; Yuan, Jiann-shiun

Author_Institution

Sch. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL, USA

Volume

11

Issue

3

fYear

2011

Firstpage

442

Lastpage

449

Abstract

Mixed-mode device and circuit simulation is used to examine device self-heating during power amplifier (PA) transient response. Lattice temperature increases with time and eventually saturates beyond the thermal time constant. Temperature variation on the effect of PA performances has been modeled and analyzed. Different gate biasing schemes that reduce the temperature drift of PA output power and power-added efficiency are evaluated. A simple adaptive gate bias technique effectively provides temperature compensation of PA performances over a wide range of temperatures.

Keywords

power amplifiers; thermal analysis; transient response; adaptive gate bias; circuit simulation; gate biasing; lattice temperature; mixed-mode device; power amplifier temperature compensation; power amplifier transient response; power-added efficiency; self-heating; temperature drift; Impact ionization; Lattices; Logic gates; MOSFETs; Power amplifiers; Temperature sensors; Bias circuit; hot electron; mixed-mode simulation; output power; power amplifier (PA); power-added efficiency; self-heating; temperature compensation;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2011.2160264

Filename

5910367