DocumentCode
1251491
Title
An experimental confirmation of automatic threshold voltage convergence in a flash memory using alternating word-line voltage pulses
Author
Gotou, H.
Author_Institution
Steel Res. Center, NKK Corp., Kanagawa, Japan
Volume
18
Issue
10
fYear
1997
Firstpage
503
Lastpage
505
Abstract
A flash memory using the alternating word-line voltage pulses is experimentally studied. Relations between pulse count and the threshold voltages of the cell are obtained. An automatic threshold voltage convergence was confirmed by the relation, and the threshold voltage is successfully controlled by the word-line pulse voltage. An application to a multi-level flash memory is proposed.
Keywords
SPICE; circuit analysis computing; integrated circuit measurement; integrated memory circuits; voltage control; SPICE simulation; Si-SiO/sub 2/-Si/sub 3/N/sub 4/; alternating word-line voltage pulses; automatic threshold voltage convergence; flash memory; multi-level flash memory; pulse count; threshold voltage control; Circuit simulation; Convergence; Flash memory; Large scale integration; Nonvolatile memory; Pulse amplifiers; Pulse measurements; SPICE; Threshold voltage; Voltage control;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.624938
Filename
624938
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