DocumentCode :
1251491
Title :
An experimental confirmation of automatic threshold voltage convergence in a flash memory using alternating word-line voltage pulses
Author :
Gotou, H.
Author_Institution :
Steel Res. Center, NKK Corp., Kanagawa, Japan
Volume :
18
Issue :
10
fYear :
1997
Firstpage :
503
Lastpage :
505
Abstract :
A flash memory using the alternating word-line voltage pulses is experimentally studied. Relations between pulse count and the threshold voltages of the cell are obtained. An automatic threshold voltage convergence was confirmed by the relation, and the threshold voltage is successfully controlled by the word-line pulse voltage. An application to a multi-level flash memory is proposed.
Keywords :
SPICE; circuit analysis computing; integrated circuit measurement; integrated memory circuits; voltage control; SPICE simulation; Si-SiO/sub 2/-Si/sub 3/N/sub 4/; alternating word-line voltage pulses; automatic threshold voltage convergence; flash memory; multi-level flash memory; pulse count; threshold voltage control; Circuit simulation; Convergence; Flash memory; Large scale integration; Nonvolatile memory; Pulse amplifiers; Pulse measurements; SPICE; Threshold voltage; Voltage control;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.624938
Filename :
624938
Link To Document :
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