High-Speed Pattern Effect Free Cross-Gain Modulation in QD-VCSOA

Author

Keshavarz, Fatemeh ; Ahmadi, Vahid

Author_Institution

Dept. of Electr. & Comput. Eng., Tarbiat Modares Univ., Tehran, Iran

Volume

30

Issue

18

fYear

2012

Firstpage

3043

Lastpage

3049

Abstract

In this paper we study high-speed pattern effect-free cross-gain modulation (XGM) in quantum-dot vertical-cavity semiconductor optical amplifier (QD-VCSOA) with and without considering Auger effect. XGM is examined for the different surface densities of QDs and bias currents. We show that appearance of the pattern effect strongly depends on the bias current and surface density of QDs. Pattern effect is improved at higher injection current or low dot density. However, at higher currents since Auger scattering is stronger it fills the higher state of QD and causes the drop of stimulated emission resulting in lower modulation efficiency.

Keywords

Auger effect; laser cavity resonators; optical modulation; quantum dot lasers; semiconductor optical amplifiers; stimulated emission; Auger effect; Auger scattering; QD-VCSOA; XGM; bias currents; high-speed pattern effect free cross-gain modulation; injection current; low dot density; modulation efficiency; quantum-dot vertical-cavity semiconductor optical amplifier; stimulated emission; surface density; Cavity resonators; Gain; Mirrors; Neodymium; Probes; Semiconductor optical amplifiers; Cross-gain modulation (XGM); pattern effect; quantum dot (QD); vertical-cavity semiconductor optical amplifier (VCSOA);

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/JLT.2012.2210029

Filename

6249707