Title :
A Drain-Extended MOS Device With Spreading Filament Under ESD Stress
Author :
Shrivastava, Mayank ; Gossner, Harald ; Russ, Christian
Author_Institution :
Intel Mobile Commun. Group, Neubiberg, Germany
Abstract :
Based on 3-D TCAD simulations, a ten-times improvement in the ESD performance of drain-extended NMOS device is predicted by incorporating deep p-implant underneath the n+ drain region. The proposed modification does not degrade the intrinsic MOS characteristics, thus enabling a self-protection ESD concept. Moreover, a detailed physical insight toward the achieved improvement is given.
Keywords :
MIS devices; electrostatic discharge; technology CAD (electronics); 3D TCAD simulations; ESD stress; deep p-implant; drain-extended NMOS device; n+ drain region; self-protection ESD concept; spreading filament; ten-times improvement; Electrostatic discharges; Lattices; MOS devices; Performance evaluation; Robustness; Solid modeling; Standards; Drain-extended MOS (DeMOS); ESD; LDMOS; moving filament; spreading filament;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2205553
