Title :
Design of a 4-W Envelope Tracking Power Amplifier With More Than One Octave Carrier Bandwidth
Author :
Yan, Jonmei J. ; Hsia, Chin ; Kimball, Donald F. ; Asbeck, Peter M.
Author_Institution :
Univ. of California at San Diego, La Jolla, CA, USA
Abstract :
This paper presents a high-efficiency broadband envelope-tracking power amplifier with operation at carrier frequencies from 500 to 1750 MHz. The RF power amplifier (RFPA) is provided by a single-chip gallium-nitride (GaN) integrated circuit (IC) whose design included a broadband output match achieved by operating directly into a load resistance of 50 Ω and broadband input match achieved using a feedback network. Under single-tone excitation, the Class-AB GaN PA IC provides output power above 12 W with greater than 50% drain efficiency and more than 10-dB gain at 40-V drain bias. When placed in envelope tracking configuration, using a representative WCDMA modulated signal with 4-MHz bandwidth and 6.6-dB peak-to-average power ratio, the ET PA achieved 4 W of average output power at its peak average drain efficiency of 31% at 752 MHz (including the power dissipation of the envelope modulator). The RFPA individually was measured to have an average drain efficiency of 58.5% for the WCDMA signal. Across the 500-1750-MHz band, using the WCDMA signal, greater than 25% average drain efficiency with more than 10 dB of gain was measured.
Keywords :
III-V semiconductors; code division multiple access; electric resistance; gallium compounds; integrated circuit design; modulators; power amplifiers; wide band gap semiconductors; ET PA; GaN; IC design; RF power amplifier; RFPA; WCDMA modulated signal; WCDMA signal; bandwidth 4 MHz; broadband input match; broadband output match; carrier frequency; class-AB PA IC; envelope modulator; envelope tracking configuration; feedback network; frequency 500 MHz to 1750 MHz; frequency 752 MHz; high-efficiency broadband envelope-tracking power amplifier; load resistance; octave carrier bandwidth; peak average drain efficiency; peak-to-average power ratio; power 4 W; power dissipation; resistance 50 ohm; single-chip gallium-nitride integrated circuit; single-tone excitation; voltage 40 V; Broadband communication; Frequency measurement; Gain; Gallium nitride; Impedance; Logic gates; Modulation; Base station; WCDMA; broadband; dynamic supply modulator; efficiency; envelope tracking; gallium nitride (GaN); integrated circuit; power amplifier (PA);
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2012.2204927