Characterization and modeling of on-chip spiral inductors for Si RFICs

Author

Chao, Chuan-Jane ; Wong, Shyh-Chyi ; Kao, Chi-Hung ; Chen, Ming-Jer ; Leu, Len-Yi ; Chiu, Kuang-Yi

Author_Institution

Inst. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

15

Issue

1

fYear

2002

fDate

2/1/2002 12:00:00 AM

Firstpage

19

Lastpage

29

Abstract

The paper presents a complete characterization of on-chip inductors fabricated in BiCMOS technology. First, a study of the scaling effect of inductance on geometry and structure parameters is presented to provide a clear guideline on inductor scaling with suitable quality factors. The substrate noise analysis and noise reduction techniques are then investigated. It is shown that floating well can improve both quality factor and noise elimination by itself under 3 GHz and together with a guard ring above 3 GHz. Finally, for accurate circuit simulations, a new inductor model is developed for predicting the skin effect and eddy effect and associated quality factor and inductance.

Keywords

BiCMOS integrated circuits; MMIC; Q-factor; UHF integrated circuits; elemental semiconductors; equivalent circuits; inductors; integrated circuit modelling; integrated circuit noise; interference suppression; modelling; silicon; skin effect; 3 GHz; BiCMOS technology; Si; Si RFICs; characterization; circuit simulations; eddy effect prediction; equivalent lumped circuit; floating well; geometry; guard ring; inductance; inductor model; noise reduction techniques; onchip spiral inductors; quality factors; scaling effect; skin effect prediction; structure parameters; substrate noise analysis; BiCMOS integrated circuits; Circuit noise; Geometry; Inductance; Inductors; Noise reduction; Paper technology; Q factor; Radiofrequency integrated circuits; Spirals;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/TSM.2002.983440

Filename

983440