• DocumentCode
    1252129
  • Title

    Artificial neural-network-based diagnosis of CVD barrel reactor

  • Author

    Bhatikar, Sanjay R. ; Mahajan, Roop L.

  • Author_Institution
    Dept. of Mech. Eng., Colorado Univ., Boulder, CO, USA
  • Volume
    15
  • Issue
    1
  • fYear
    2002
  • fDate
    2/1/2002 12:00:00 AM
  • Firstpage
    71
  • Lastpage
    78
  • Abstract
    This paper presents an artificial neural network (ANN) based diagnostic strategy applied to a chemical vapor deposition (CVD) barrel reactor of the type commonly used in silicon epitaxy. The strategy is based on the spatial variation of the rate of deposition of silicon on a facet of the reactor. Our hypothesis is that this spatial variation, quantified as a vector of variously measured standard deviations, encodes a pattern reflecting the state of the reactor. Therefore, a process fault (event) can be diagnosed by decoding the pattern by an ANN. We implemented this simple scheme by simulating different events by means of a regression model relating the rate of deposition to the process settings. Three different events were simulated and various ANNs were trained to detect and classify these events. It is shown that a single ANN or a combination of ANNs does an excellent job. We also demonstrate that the threshold rule for setting the threshold of a binary output neuron performing a classification task enhances the diagnostic performance. A novel multiple expert scheme that refers to several ANNs trained in the same classification task for decision-making in order to resolve ambiguities and improve the reliability of the final decision is presented and shown to be effective
  • Keywords
    chemical vapour deposition; diagnostic expert systems; elemental semiconductors; fault diagnosis; neural nets; process control; semiconductor growth; silicon; vapour phase epitaxial growth; ANN based diagnostic strategy; ANN training; ANNs; CVD barrel reactor; Si; artificial neural network based diagnostic strategy; artificial neural-network-based diagnosis; binary output neuron threshold; chemical vapor deposition barrel reactor; classification task; decision reliability; decision-making; deposition rate; diagnostic performance; multiple expert scheme; process control; process fault diagnosis; reactor state pattern; regression model; silicon deposition rate spatial variation; silicon epitaxy; standard deviations; threshold rule; Artificial neural networks; Chemical vapor deposition; Decoding; Discrete event simulation; Epitaxial growth; Event detection; Inductors; Measurement standards; Neurons; Silicon;
  • fLanguage
    English
  • Journal_Title
    Semiconductor Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0894-6507
  • Type

    jour

  • DOI
    10.1109/66.983446
  • Filename
    983446