Title :
Effect of incident angles on the morphology of silicon nanocone array induced by Ar+ sputtering at room temperature
Author :
Xianrui Zhao ; Qintao Li ; Qinyi Shi ; Shuangxi Xue ; Zhigang Li ; Yanping Liu
Author_Institution :
Mater. Dept., Taizhou Univ., Linhai, China
fDate :
7/1/2012 12:00:00 AM
Abstract :
The effect of incident angles on the morphology of silicon nanocone array induced by Ar+ sputtering at room temperature has been investigated. The investigation of scanning electron microscopy indicates that with the increment of incident angle from 30°, 45°, 60° to 75°, the density of silicon nanocone increases from 1-2 × 108 cm-2, 1-2 × 108 cm-2, 6-7 × 108 cm-2 to 1-2 × 109 cm-2, the apex angle of cone decreased from 70°, 55°, 36° to 27° and the aspect ratio of silicon nanocone decrease from 320/410 nm, 340/330 nm, 570/370 nm to 200/120 nm.
Keywords :
argon; elemental semiconductors; nanostructured materials; scanning electron microscopy; silicon; sputtering; surface morphology; Ar+ sputtering; Si; apex angle; aspect ratio; incident angle; scanning electron microscopy; silicon nanocone array morphology; temperature 293 K to 298 K;
Journal_Title :
Micro & Nano Letters, IET
DOI :
10.1049/mnl.2012.0374