Title :
A novel experimental technique for the lateral profiling of oxide and interface state charges in hot-hole degraded n-MOSFETs
Author :
Ang, D.S. ; Ling, C.H.
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore
Abstract :
A new experimental technique, based on gate-to-drain capacitance C/sub gd//sup s/ and charge pumping (CP) current, is proposed for the lateral profiting of oxide and interface state charges in the LDD region of the n-MOSFETs. The device is injected with hot holes, which are subsequently removed by a low-level channel hot-electron stress. The degree of neutralization is monitored by C/sub gd//sup s/ until complete annihilation of trapped holes is realized. This allows the effects of oxide and interface state charges on CP characteristics to be clearly distinguished, and the spatial profiles of the two charges to be separately determined.
Keywords :
MOSFET; hole traps; hot carriers; interface states; LDD n-MOSFET; charge pumping current; gate-to-drain capacitance; hot-hole degradation; interface state charges; lateral profiling; neutralization; oxide charges; trapped hole annihilation; Capacitance; Channel hot electron injection; Charge pumps; Degradation; Hot carriers; Interface states; MOSFET circuits; Monitoring; Stress;
Journal_Title :
Electron Device Letters, IEEE
