Title :
AlGaAsSb/AlAsSb microcavity designed for 1.55 μm and grown by molecular beam epitaxy
Author :
Kohl, A. ; Harmand, J.C. ; Oudar, J.L. ; Rao, E.V.K. ; Kuszelewicz, R. ; Delpon, E.L.
Author_Institution :
Lab. de Bagneux, CNET, Bagneux
fDate :
4/10/1997 12:00:00 AM
Abstract :
The first AlGaAsSb/AlAsSb microcavity structure was grown by solid source molecular beam epitaxy on an InP substrate. The reflectivity spectrum shows a clear resonance at 1.5 μm below a 0.997 reflectivity plateau with a 190 nm wide stopband. A detailed analysis of this spectrum suggests a growth rate stability of better than 1% over the 7.5 h of growth. To investigate the quality of the structure the photoluminescence spectrum was also obtained
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; molecular beam epitaxial growth; optical fabrication; photoluminescence; reflectivity; 1.55 micron; AlGaAsSb-AlAsSb; AlGaAsSb/AlAsSb microcavity; InP substrate; growth rate stability; photoluminescence spectrum; reflectivity spectrum; resonance; solid source molecular beam epitaxy; stopband;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970447
