Title :
Broadband and gain-flattened amplifier composed of a 1.55 μm-band and a 1.58 μm-band Er3+-doped fibre amplifier in a parallel configuration
Author :
Yamada, Makoto ; Ono, H. ; Kanamori, Toshiyuki ; Sudo, Shunsuke ; Ohishi, Yasutake
Author_Institution :
NTT Opto-Electron. Labs., Ibaraki
fDate :
4/10/1997 12:00:00 AM
Abstract :
The authors construct a broadband and gain-flattened Er3+ -doped fibre amplifier (EDFA) with a flat amplification bandwidth of 54 nm for wavelength division multiplexed signals. This was achieved by employing a 1.58 μm-band EDFA and a 1.55 μm-band EDFA in a parallel configuration. Excellent flat amplification characteristics were obtained for 1530-1560 nm and 1576-1600 nm signal wavelength regions, with a gain non-uniformity of <1.7 dB and a signal gain of 30 dB
Keywords :
erbium; fibre lasers; optical communication equipment; wavelength division multiplexing; wideband amplifiers; 1.55 micron; 1.58 micron; 30 dB; EDFA; Er3+-doped fibre amplifier; broadband gain-flattened amplifier; gain nonuniformity; parallel configuration; signal gain; wavelength division multiplexing;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970455
