• DocumentCode
    1252320
  • Title

    Cryogenic high-frequency operation of tunnelling hot-electron transfer amplifiers

  • Author

    Laskar, J. ; Moise, T.S. ; Kao, Y.C.

  • Volume
    33
  • Issue
    8
  • fYear
    1997
  • fDate
    4/10/1997 12:00:00 AM
  • Firstpage
    711
  • Lastpage
    713
  • Abstract
    The authors report the DC and high-frequency characteristics of tunnelling hot-electron transfer amplifiers (THETA) up to 18 K and with a varying composition of indium in the base. Optimum performance has been observed for the devices with 57% of indium in the InxGa 1-xAs base. Small-signal model intrinsic elements are extracted from the S-parameter data
  • Keywords
    cryogenic electronics; hot electron transistors; microwave amplifiers; tunnel transistors; 18 K; DC characteristics; InxGa1-xAs base; InGaAs; S-parameters; THETA transistor; cryogenic operation; high-frequency characteristics; small-signal model; tunnelling hot-electron transfer amplifier;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19970472
  • Filename
    591119
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1252320