Title :
High frequency GaInP/GaAs heterostructure-emitter bipolar transistor with low offset voltage
Author :
Hai-Jiang Ou ; Yue-Fei Yang ; Yang, E.S.
Author_Institution :
Dept. of Electr. Eng., Columbia Univ., New York, NY
fDate :
4/10/1997 12:00:00 AM
Abstract :
A carbon doped GaInP/GaAs heterostructure-emitter bipolar transistor (HEBT) grown by MOCVD is reported with high RF performance. A cutoff frequency of 50 GHz and maximum oscillation frequency of 90 GHz were obtained for the device. An offset voltage as low as 90 mV was achieved. It is shown that the GaInP/GaAs HEBT with a high frequency and a low offset voltage is a good candidate for low battery power device applications
Keywords :
III-V semiconductors; chemical vapour deposition; gallium arsenide; gallium compounds; indium compounds; microwave bipolar transistors; p-n heterojunctions; 50 GHz; 90 GHz; 90 mV; GaInP-GaAs; MOCVD; RF performance; cutoff frequency; heterostructure-emitter bipolar transistor; low battery power device applications; maximum oscillation frequency; offset voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970485
