DocumentCode :
1252339
Title :
High reflectivity, low resistance Te doped AlGaAsSb/AlAsSb Bragg mirror
Author :
Dias, I.F.L. ; Nabet, B. ; Kohl, A. ; Harmand, J.C.
Author_Institution :
CNET, Bagneux, France
Volume :
33
Issue :
8
fYear :
1997
fDate :
4/10/1997 12:00:00 AM
Firstpage :
716
Lastpage :
717
Abstract :
The authors report a high quality n-type Te-doped AlGaAsSb/AlAsSb Bragg mirror lattice matched to InP grown by molecular beam epitaxy. A 99.8% reflectivity with a 190 nm stopband width centred at 1.51 μm is obtained. An average voltage drop of 44 mV per period at a current density of 1 kA/cm2 is observed for a mean electron concentration of ~3.5×1018 cm-3
Keywords :
III-V semiconductors; aluminium compounds; current density; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; surface emitting lasers; tellurium; 1.51 micrometre; 44 mV; AlGaAsSb:Te-AlAsSb:Te; Bragg mirror; DBRs; III-V semiconductors; VCSEL; average voltage drop; current density; lattice matching; mean electron concentration; molecular beam epitaxy; reflectivity; stopband width;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19970483
Filename :
591122
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1252339
بازگشت