• DocumentCode
    1252339
  • Title

    High reflectivity, low resistance Te doped AlGaAsSb/AlAsSb Bragg mirror

  • Author

    Dias, I.F.L. ; Nabet, B. ; Kohl, A. ; Harmand, J.C.

  • Author_Institution
    CNET, Bagneux, France
  • Volume
    33
  • Issue
    8
  • fYear
    1997
  • fDate
    4/10/1997 12:00:00 AM
  • Firstpage
    716
  • Lastpage
    717
  • Abstract
    The authors report a high quality n-type Te-doped AlGaAsSb/AlAsSb Bragg mirror lattice matched to InP grown by molecular beam epitaxy. A 99.8% reflectivity with a 190 nm stopband width centred at 1.51 μm is obtained. An average voltage drop of 44 mV per period at a current density of 1 kA/cm2 is observed for a mean electron concentration of ~3.5×1018 cm-3
  • Keywords
    III-V semiconductors; aluminium compounds; current density; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; surface emitting lasers; tellurium; 1.51 micrometre; 44 mV; AlGaAsSb:Te-AlAsSb:Te; Bragg mirror; DBRs; III-V semiconductors; VCSEL; average voltage drop; current density; lattice matching; mean electron concentration; molecular beam epitaxy; reflectivity; stopband width;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19970483
  • Filename
    591122
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1252339