A self-consistent method for complete small-signal parameter extraction of InP-based heterojunction bipolar transistors (HBT´s)

Author

Rios, J.M.M. ; Lunardi, Leda M. ; Chandrasekhar, S. ; Miyamoto, Y.

Author_Institution

Crawford Hill Lab., Lucent Technol.-Bell Labs., Holmdel, NJ, USA

Volume

45

Issue

1

fYear

1997

fDate

1/1/1997 12:00:00 AM

Firstpage

39

Lastpage

45

Abstract

A complete method for parameter extraction from small-signal measurements of InP-based heterojunction bipolar transistors (HBT´s) is presented. Employing analytically derived equations, a numerical solution is sought for the best fit between the model and the measured data. Through parasitics extraction and an optimization process, a realistic model for a self-aligned HBT technology is obtained. The results of the generated s-parameters from the model for a 2×10 μm² emitter area device are presented over a frequency range of 250 MHz-36 GHz with excellent agreement to the measured data

Keywords

III-V semiconductors; S-parameters; UHF bipolar transistors; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; semiconductor device models; 250 MHz to 36 GHz; III-V semiconductors; InGaAs-InP; analytically derived equations; emitter area; heterojunction bipolar transistors; optimization process; parasitics extraction; s-parameters; self-consistent method; small-signal parameter extraction; Capacitance; Data mining; Equations; Equivalent circuits; Geometry; Heterojunction bipolar transistors; Integrated circuit measurements; Integrated circuit modeling; Laboratories; Parameter extraction;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.552030

Filename

552030