A three-terminal intelligent power MOSFET with built-in reverse battery protection for automotive applications

Author

Sakamoto, Kozo ; Fuchigami, Nobutaka ; Takagawa, Kyoichi ; Ohtaka, Shigeo

Author_Institution

Res. Lab., Hitachi Ltd., Ibaraki, Japan

Volume

46

Issue

11

fYear

1999

fDate

11/1/1999 12:00:00 AM

Firstpage

2228

Lastpage

2234

Abstract

An intelligent power MOSFET with built-in reverse battery protection, which is important for automotive power switches, has been developed. The protection is accomplished by integrating an additional power MOSFET in series with a power MOSFET and the control circuit of the additional power MOSFET. The reverse battery protection is achieved without using external control signals. The positive drain breakdown voltage for the proposed MOSFET is 71 V and the negative drain current at a drain voltage of -16 V is only -750 μA. The on-state resistance is 170 mΩ. This new intelligent power MOSFET can replace the conventional three-terminal power MOSFET´s used in automotive applications

Keywords

automotive electronics; power MOSFET; protection; 71 V; RBP FET; automotive power switch; built-in control circuit; on-state resistance; reverse battery protection; three-terminal intelligent power MOSFET; Automotive applications; Automotive engineering; Batteries; Intelligent vehicles; MOSFET circuits; Power MOSFET; Power integrated circuits; Protection; Semiconductor diodes; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.796300

Filename

796300