DocumentCode :
1252624
Title :
A three-terminal intelligent power MOSFET with built-in reverse battery protection for automotive applications
Author :
Sakamoto, Kozo ; Fuchigami, Nobutaka ; Takagawa, Kyoichi ; Ohtaka, Shigeo
Author_Institution :
Res. Lab., Hitachi Ltd., Ibaraki, Japan
Volume :
46
Issue :
11
fYear :
1999
fDate :
11/1/1999 12:00:00 AM
Firstpage :
2228
Lastpage :
2234
Abstract :
An intelligent power MOSFET with built-in reverse battery protection, which is important for automotive power switches, has been developed. The protection is accomplished by integrating an additional power MOSFET in series with a power MOSFET and the control circuit of the additional power MOSFET. The reverse battery protection is achieved without using external control signals. The positive drain breakdown voltage for the proposed MOSFET is 71 V and the negative drain current at a drain voltage of -16 V is only -750 μA. The on-state resistance is 170 mΩ. This new intelligent power MOSFET can replace the conventional three-terminal power MOSFET´s used in automotive applications
Keywords :
automotive electronics; power MOSFET; protection; 71 V; RBP FET; automotive power switch; built-in control circuit; on-state resistance; reverse battery protection; three-terminal intelligent power MOSFET; Automotive applications; Automotive engineering; Batteries; Intelligent vehicles; MOSFET circuits; Power MOSFET; Power integrated circuits; Protection; Semiconductor diodes; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.796300
Filename :
796300
Link To Document :
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