A resonant-cap power combiner for two-terminal millimeter-wave devices

Author

Bauer, T ; Freyer, J. ; Claassen, M.

Author_Institution

Lehrstuhl fur Allgemeine Elektrotech. und Angewandte Elecktronik, Tech. Univ. Munchen, Germany

Volume

45

Issue

1

fYear

1997

fDate

1/1/1997 12:00:00 AM

Firstpage

146

Lastpage

148

Abstract

A power combiner for three active two-terminal devices located under a common resonant cap is presented. An equivalent circuit with lumped elements describing the coupling between the devices is derived from a numerical finite-element simulation of the resonator. The applied monolithically integrated mounting technique for the active devices minimizes parasitic elements and gains high reproducibility and symmetry. Experimental results with GaAs IMPATT diodes on diamond heatsink of up to 500 mW at 91 GHz with a dc to RF conversion efficiency of 9.0% and excellent combining efficiency demonstrate the capability for power generation in the mm-wave region

Keywords

III-V semiconductors; IMPATT oscillators; equivalent circuits; finite element analysis; gallium arsenide; millimetre wave devices; millimetre wave diodes; millimetre wave oscillators; power combiners; 500 mW; 9.0 percent; 91 GHz; DC to RF conversion efficiency; GaAs; GaAs IMPATT diode; active two-terminal millimeter-wave device; diamond heatsink; equivalent circuit; finite element method; monolithically integrated mounting; numerical simulation; resonant-cap power combiner; Circuit simulation; Coupling circuits; Equivalent circuits; Finite element methods; Millimeter wave integrated circuits; Millimeter wave technology; Numerical simulation; Power combiners; Reproducibility of results; Resonance;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.552047

Filename

552047