A physical, yet simple, small-signal equivalent circuit for the heterojunction bipolar transistor

Author

Gobert, Y. ; Tasker, P.J. ; Bachem, K.H.

Author_Institution

Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany

Volume

45

Issue

1

fYear

1997

fDate

1/1/1997 12:00:00 AM

Firstpage

149

Lastpage

153

Abstract

A physical, yet simple, small-signal equivalent circuit for the heterojunction bipolar transistor (HBT) is proposed. This circuit was established by analyzing in detail the physical operation of the HBT. The model verification was carried out by comparison of the measured and simulated S- and Z-parameters for both passive (reverse-biased) and active bias conditions. A feature of this model is that it uses a direct extraction method to determine the parasitic elements, in particular, the parasitic capacitances. The excellent agreement between the measured and simulated parameters was verified all over the frequency range from 0.25 to 75 GHz

Keywords

S-parameters; capacitance; equivalent circuits; heterojunction bipolar transistors; microwave bipolar transistors; millimetre wave bipolar transistors; semiconductor device models; 0.25 to 75 GHz; HBT; S-parameters; Z-parameters; active bias conditions; direct extraction method; heterojunction bipolar transistor; parasitic capacitances; parasitic elements; reverse-biased conditions; small-signal equivalent circuit; Circuit simulation; Circuit topology; Equivalent circuits; FETs; Frequency measurement; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; MESFET circuits; Parasitic capacitance;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.552048

Filename

552048