Title :
45 Gbit/s AlGaAs/GaAs HEMT multiplexer IC
Author :
Lao, Z. ; Nowotny, U. ; Thiede, A. ; Hurm, V. ; Kaufel, G. ; Rieger-Motzer, M. ; Hulsmann, A.
Author_Institution :
Fraunhofer-Inst. of Appl. Solid-State Phys., Freiburg
fDate :
3/27/1997 12:00:00 AM
Abstract :
A high-speed time-division 2:1 multiplexer is presented. The IC is fabricated with the authors´ standard 0.2 μm gate-length enhancement and depletion AlGaAs/GaAs HEMT technology (fT=60 and 55 GHz). The circuit can operate up to 45 Gbit.s using single-ended data and clock inputs. The differential output voltage is 1 Vp-p. The power consumption is 500 mW using a single supply voltage of 4.5 V
Keywords :
HEMT integrated circuits; III-V semiconductors; SONET; aluminium compounds; gallium arsenide; multiplexing equipment; optical communication equipment; optical fibre communication; synchronous digital hierarchy; time division multiplexing; -4.5 V; 0.2 micron; 45 Gbit/s; 500 mW; 55 GHz; 60 GHz; AlGaAs-GaAs; HEMT multiplexer IC; III-V semiconductors; clock inputs; depletion HEMT technology; differential output voltage; gate-length enhancement; power consumption; single supply voltage; single-ended data; time-division 2:1 multiplexer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970364
