Title :
High temperature 1 Gbit/s data transmission using λ=835 nm GaAs VCSELs
Author :
Schnitzer, P. ; Grabherr, M. ; Reiner, G. ; Weigl, B. ; Ebeling, K.J.
Author_Institution :
Dept. of Optoelectron., Ulm Univ.
fDate :
3/27/1997 12:00:00 AM
Abstract :
Using laterally oxidised VCSELs, the authors demonstrate 1 Gbit/s pseudo-random data transmission at 10-11 bit-error rate over the temperature range 20-100°C, applying constant 2.5 mA bias current and fixed 0.5Vpp voltage swing for modulation
Keywords :
III-V semiconductors; data communication; gallium arsenide; gradient index optics; optical communication equipment; optical fibre communication; semiconductor lasers; surface emitting lasers; 1 Gbit/s; 2.5 mA; 20 to 100 degC; 835 nm; GaAs; III-V semiconductors; bit-error rate; constant bias current; fixed voltage swing; laterally oxidised VCSELs; pseudo-random data transmission;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970363
