DocumentCode
1253043
Title
Type-II interband quantum cascade laser at 3.8 μm
Author
Chih-Hsiang Lin ; Yang, R.Q. ; Zhang, Dejing ; Murry, S.J. ; Pei, S.S. ; Allerman, A.A. ; Kurtz, Sarah R.
Author_Institution
Space Vacuum Epitaxy Center, Houston Univ., TX
Volume
33
Issue
7
fYear
1997
fDate
3/27/1997 12:00:00 AM
Firstpage
598
Lastpage
599
Abstract
The authors have demonstrated the first stimulated emission from Sb-based type-II quantum cascade configuration. Laser emission at 3.8 μm has been observed for temperatures up to 170 K. The device was composed of 20 periods of active regions separated by digitally graded quantum-well injection regions
Keywords
III-V semiconductors; aluminium compounds; energy gap; indium compounds; quantum well lasers; 3.8 micrometre; AlSb-InAs-InGaSb; III-V semiconductors; active regions; digitally graded quantum-well injection regions; laser stimulated emission; mid-IR lasers; type-II interband quantum cascade laser;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19970421
Filename
591386
Link To Document