DocumentCode
1253168
Title
20 Gbit/s long wavelength monolithic integrated photoreceiver grown on GaAs
Author
Hurm, V. ; Benz, W. ; Bronner, W. ; Fink, T. ; Kaufel, G. ; Kohler, Klaus ; Lao, Z. ; Ludwig, Michael ; Raynor, B. ; Rosenzweig, J. ; Schlechtweg, Michael ; Windscheif, J.
Author_Institution
Fraunhofer Inst. for Appl. Solid State Phys., Freiburg
Volume
33
Issue
7
fYear
1997
fDate
3/27/1997 12:00:00 AM
Firstpage
624
Lastpage
626
Abstract
The first 20 Gbit/s 1.3-1.55 μm wavelength monolithic integrated photoreceiver grown on GaAs substrate has been fabricated using AlGaAs/GaAs HEMTs. At a wavelength of 1.3 μm, the integrated InGaAs MSM photodiode has a responsivity of 0.32A/W and the photoreceiver has a -3 dB bandwidth of 16.5 GHz. Clearly-opened eye diagrams for a 20 Gbit/s 1.55 μm optical data stream have been demonstrated
Keywords
HEMT integrated circuits; III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; integrated optoelectronics; metal-semiconductor-metal structures; optical receivers; photodiodes; -3 dB bandwidth; 1.3 to 1.55 micrometre; 16.5 GHz; 20 Gbit/s; GaAs; HEMTs; InGaAs-AlGaAs-GaAs; MSM photodiode; clearly-opened eye diagrams; monolithic integrated photoreceiver; optical data stream; responsivity;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19970379
Filename
591408
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