• DocumentCode
    1253190
  • Title

    Very high current density pseudomorphic double channel In0.49 Ga0.51P/In0.3Ga0.7As/GaAs HEMT

  • Author

    Yang, H.-P.D.

  • Author_Institution
    Div. of Optoelctron. Mater. & Devices, Opto-Electron. & Syst. Labs., Hsinchu
  • Volume
    33
  • Issue
    7
  • fYear
    1997
  • fDate
    3/27/1997 12:00:00 AM
  • Firstpage
    627
  • Lastpage
    628
  • Abstract
    The authors report the results of a 0.7 μm gate-length pseudomorphic double channel In0.49Ga0.51P/In0.3Ga0.7 As/GaAs HEMT for communication systems applications. The devices achieved a very high saturation current density of 801 mA/mm and a maximum peak transconductance of 256 mS/mm. The maximum gate-drain breakdown voltage measured was 7.8 V
  • Keywords
    III-V semiconductors; current density; gallium arsenide; high electron mobility transistors; indium compounds; microwave field effect transistors; semiconductor device reliability; -7.8 V; 0.7 micron; In0.49Ga0.51P-In0.3Ga0.7 As-GaAs; communication systems applications; current density; gate-drain breakdown voltage; microwave transistors; peak transconductance; pseudomorphic double channel HEMT; saturation current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19970386
  • Filename
    591415
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1253190