DocumentCode
1253236
Title
Improved breakdown voltages in submicrometre planar GaAs MESFETs with a thin (Ga,ln)P surface layer
Author
Bolognesi, C.R. ; Dvorak, M.W. ; Soerensen, G. ; Watkins, S.P.
Author_Institution
Dept. of Phys., Simon Fraser Univ., Burnaby, BC
Volume
33
Issue
7
fYear
1997
fDate
3/27/1997 12:00:00 AM
Firstpage
636
Lastpage
637
Abstract
A thin 100 Å (Ga,In)P surface layer in the extrinsic gate-to-drain space of the transistor improves the power-handling capabilities of MOCVD-grown planar GaAs MESFETs. The authors demonstrate 0.8 μm devices with drain and gate-drain breakdown voltages of 21 and 23-24 V, respectively. Although achieved in non-optimised structures the results are comparable to some obtained with more complicated passivation approaches
Keywords
III-V semiconductors; chemical vapour deposition; electric breakdown; gallium arsenide; gallium compounds; indium compounds; power MESFET; semiconductor device reliability; semiconductor growth; 0.8 micron; 100 angstrom; 21 V; 23 to 24 V; GaInP-GaAs; III-V semiconductors; MOCVD-grown planar devices; drain breakdown voltages; extrinsic gate-to-drain space; gate-drain breakdown voltages; power-handling capabilities; submicrometre planar MESFETs;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19970394
Filename
591425
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