DocumentCode
1253244
Title
Microwave performance of 0.25 μm doped channel GaN/AlGaN heterostructure field effect transistor at elevated temperatures
Author
Chen, Qian ; Gaska, R. ; Khan, Muhammad Asad ; Shur, Michael S. ; Adesida, I. ; Burm, J. ; Schaff, W.J. ; Eastman, L.F.
Author_Institution
APA Opt. Inc., Blaine, MN
Volume
33
Issue
7
fYear
1997
fDate
3/27/1997 12:00:00 AM
Firstpage
637
Lastpage
639
Abstract
The authors report the DC and microwave performance of a 0.25 μm gate doped channel Al0.14Ga0.86N/GaN HFETs exhibiting a cutoff frequency of 37.5 GHz and a maximum frequency of oscillations of 80.4 GHz. The calculations of the Fermi level position and comparison with the expected conduction band discontinuity confirm that the channel in these transistors is doped. DC and microwave characteristics of these devices do not change much with temperature up to at least 200 and 90°C, respectively
Keywords
Fermi level; III-V semiconductors; aluminium compounds; doping profiles; gallium compounds; microwave field effect transistors; 0 to 200 degC; 0.25 micron; 37.5 GHz; 80.4 GHz; Fermi level position; GaN-AlGaN; III-V semiconductors; conduction band discontinuity; cutoff frequency; heterostructure field effect transistor; maximum frequency of oscillations; microwave performance;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19970403
Filename
591426
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