Title :
Self-aligned pseudomorphic HEMT with a low-temperature-grown GaAs gate insulator
Author :
Chen, C.L. ; Mahoney, L.J. ; Calawa, S.D. ; Molvar, K.M. ; Calawa, A.R.
Author_Institution :
Lincoln Lab., MIT, Lexington, MA, USA
fDate :
3/27/1997 12:00:00 AM
Abstract :
A new enhancement-mode GaAs pseudomorphic high-electron-mobility transistor (pHEMT) with a low-temperature-grown (LTG) GaAs gate insulator has been developed. The source and drain are doped by self-aligned implant and no gate recess is needed. The LTG-GaAs gate insulator drastically reduces the gate leakage current, allowing a maximum drain current of 390 mA/mm obtained at 3 V of forward gate bias. The maximum transconductance is 330 mS/mm and the cutoff frequency is 31 GHz for pHEMTs with a 0.5 μm gate length
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; ion implantation; leakage currents; 0.5 micron; 3 V; 31 GHz; GaAs-AlAs-InGaAs; cutoff frequency; forward gate bias; gate leakage current; low-temperature-grown gate insulator; maximum drain current; self-aligned implant; self-aligned pseudomorphic HEMT; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970383
