Title :
Hole velocity overshoot in partially strain compensated Si0.793Ge0.2C0.007 inversion layers [MOSFETs]
Author :
Kar, G.S. ; Maikap, S. ; Banerjee, S.K. ; Ray, S.K.
Author_Institution :
Dept. of Phys. & Meteorol., Indian Inst. of Technol., Kharagpur, India
fDate :
1/31/2002 12:00:00 AM
Abstract :
A velocity-field study of holes in partially strain compensated Si 0.793Ge0.2C0.007 p-MOSFET devices with channel lengths ranging from 0.8 to 10 μm has been carried out. A very high effective hole velocity, 1.1 × 107 cm/s attributed to the onset of velocity overshoot in SiGeC p-MOSFETs, is reported. Significant improvement in effective hole velocity of Si0.793Ge0.2C0.007, compared to that of a binary Si0.8Ge0.2 device, is observed. this being due to C-induced strain stabilisation in the metastable SiGe layer
Keywords :
Ge-Si alloys; MOSFET; germanium compounds; internal stresses; inversion layers; semiconductor device measurement; semiconductor materials; silicon compounds; 0.8 to 10 micron; C-induced strain stabilisation; Si0.793Ge0.2C0.007; SiGeC p-MOSFETs; channel lengths; high effective hole velocity; hole velocity; hole velocity overshoot; holes; metastable SiGe layer; partially strain compensated inversion layers; partially strain compensated p-MOSFET devices; velocity overshoot; velocity-field study;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020095
