Title :
Low threshold InGaAs/AlGaAs lasers grown on (111)B GaAs substrate
Author :
Khoo, E.A. ; Pabla, A.S. ; Woodhead, J. ; David, J.P.R. ; Grey, R. ; Rees, G.J.
Author_Institution :
Dept. of Electron. & Electr. Eng., Sheffield Univ.
fDate :
5/22/1997 12:00:00 AM
Abstract :
The authors report the lowest threshold current density to date of a strained InGaAs/GaAs/AlGaAs single quantum well separate confinement heterostructure laser grown on a (111)B GaAs substrate. A Jth value as low as 87 A/cm2 has been obtained for a 2500 μm long broad area laser. The internal quantum efficiency is estimated to be 82% and the internal loss is 5.5 cm-1
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; quantum well lasers; (111)B GaAs substrate; 82 percent; GaAs; InGaAs-AlGaAs; broad area laser; internal loss; internal quantum efficiency; strained InGaAs/GaAs/AlGaAs SQW-SCH laser; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970615
