• DocumentCode
    1253727
  • Title

    Room temperature continuous-wave photopumped operation of 1.22 μm GaInNAs/GaAs single quantum well vertical cavity surface-emitting laser

  • Author

    Larson, Michael C. ; Kondow, M. ; Kitatani, Takeshi ; Yazawa, Yoshiki ; Okai, M.

  • Author_Institution
    Central Res. Lab., Hitachi Ltd., Tokyo
  • Volume
    33
  • Issue
    11
  • fYear
    1997
  • fDate
    5/22/1997 12:00:00 AM
  • Firstpage
    959
  • Lastpage
    960
  • Abstract
    Photopumped operation of a vertical-cavity surface-emitting laser using a single GaInNAs/GaAs quantum well active layer is demonstrated for the first time. The device lases at continuous wave at room temperature, with an active wavelength of 1.22 μm and a threshold pump intensity of 3-5 kW/cm2, for an equivalent current density of 2-3 kA/cm2
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; optical pumping; quantum well lasers; surface emitting lasers; 1.22 micron; GaInNAs-GaAs; GaInNAs/GaAs single quantum well active layer; room temperature continuous-wave photopumping; vertical cavity surface-emitting laser;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19970636
  • Filename
    591574
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1253727