Title :
Room temperature continuous-wave photopumped operation of 1.22 μm GaInNAs/GaAs single quantum well vertical cavity surface-emitting laser
Author :
Larson, Michael C. ; Kondow, M. ; Kitatani, Takeshi ; Yazawa, Yoshiki ; Okai, M.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo
fDate :
5/22/1997 12:00:00 AM
Abstract :
Photopumped operation of a vertical-cavity surface-emitting laser using a single GaInNAs/GaAs quantum well active layer is demonstrated for the first time. The device lases at continuous wave at room temperature, with an active wavelength of 1.22 μm and a threshold pump intensity of 3-5 kW/cm2, for an equivalent current density of 2-3 kA/cm2
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical pumping; quantum well lasers; surface emitting lasers; 1.22 micron; GaInNAs-GaAs; GaInNAs/GaAs single quantum well active layer; room temperature continuous-wave photopumping; vertical cavity surface-emitting laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970636
