DocumentCode :
1253757
Title :
Wide temperature range linear DFB lasers with very low threshold current
Author :
Chen, Tiffani R. ; Chen, P.C. ; Ungar, J. ; Paslaski, J. ; Oh, Sung-Min ; Luong, Huy ; Bar-Chaim, N.
Author_Institution :
Ortel Corp., Alhambra, CA
Volume :
33
Issue :
11
fYear :
1997
fDate :
5/22/1997 12:00:00 AM
Firstpage :
963
Lastpage :
965
Abstract :
Singlemode operation between -60 and +110°C in strained multiquantum well InGaAsP/InP DFB lasers is demonstrated. The lasers display very low threshold current, high quantum efficiency, low distortion and low noise, which make them desirable for digital as well as analogue applications
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; laser modes; quantum well lasers; -60 to 110 C; InGaAsP-InP; analogue applications; digital applications; distortion; noise; quantum efficiency; single mode operation; strained multiquantum well linear DFB laser; temperature range; threshold current;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19970619
Filename :
591580
Link To Document :
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