DocumentCode :
1253826
Title :
Correction to “Performance Enhancement of Blue Light-Emitting Diodes Without an Electron-Blocking Layer by Using p-Type Doped Barriers and a Hole-Blocking Layer of Low Al Mole Fraction” [Feb 12 169-174]
Author :
Zhang, Yan-Yu ; Fan, Guang-Han ; Zhang, Tianzhu
Author_Institution :
Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou, China
Volume :
48
Issue :
9
fYear :
2012
Firstpage :
1233
Lastpage :
1233
Abstract :
In the above titled paper (ibid., vol.48, no. 2, pp. 169-174, Feb. 2012), the affiliation of Yun-Yan Zhang should have read as follows. Y.Y. Zhang is with the Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China (e-mail: yunyan_zhang@126.com).
Keywords :
Aluminum gallium nitride; Electroluminescence; Light emitting diodes; Wide band gap semiconductors;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.2012.2209969
Filename :
6252116
Link To Document :
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