• DocumentCode
    1253826
  • Title

    Correction to “Performance Enhancement of Blue Light-Emitting Diodes Without an Electron-Blocking Layer by Using p-Type Doped Barriers and a Hole-Blocking Layer of Low Al Mole Fraction” [Feb 12 169-174]

  • Author

    Zhang, Yan-Yu ; Fan, Guang-Han ; Zhang, Tianzhu

  • Author_Institution
    Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou, China
  • Volume
    48
  • Issue
    9
  • fYear
    2012
  • Firstpage
    1233
  • Lastpage
    1233
  • Abstract
    In the above titled paper (ibid., vol.48, no. 2, pp. 169-174, Feb. 2012), the affiliation of Yun-Yan Zhang should have read as follows. Y.Y. Zhang is with the Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China (e-mail: yunyan_zhang@126.com).
  • Keywords
    Aluminum gallium nitride; Electroluminescence; Light emitting diodes; Wide band gap semiconductors;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.2012.2209969
  • Filename
    6252116